Method for the formation of a thin optical crystal layer overlying a low dielectric constant substrate
US6436614B1 · kind B1 · utility
Inventors
Key dates
| Filing date | Jun 19, 2001 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Jun 19, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1059
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for the formation of a thin optical crystal layer (e.g., a thin LiNbO3 optical single crystal layer) overlying a low dielectric constant substrate (e.g., a low dielectric constant glass substrate). The method includes implanting ions (e.g., He+) through a surface of an optical crystal substrate. The implanting of the ions defines, in the optical crystal substrate, a thin ion-implanted optical crystal layer overlying a bulk optical crystal substrate. A low dielectric constant substrate is subsequently bonded to the surface, using either a direct or an indirect bonding technique, to form a bonded structure. The bonded structure is thermally annealed at a temperature in the range of 300° C. to 600° C. for 30 minutes to 300 minutes. Thereafter, the thin ion-implanted optical crystal layer and low dielectric constant substrate are separated from the bulk optical crystal substrate using mechanical force applied to the low dielectric constant substrate and/or the bulk optical crystal substrate in the direction of separation. As a result, a thin optical crystal layer overlying a low dielectric constant substrate is formed. The thin optical crystal layer has characteristics…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.