Semiconductor devices which utilize low K dielectrics

US6437425B1 · kind B1 · utility

Assignee

• Agere Systems Guardian Corporation · US

Inventors

• Utpal Kumar Chakrabarti · Allentown, US
• Bora Onat · Princeton, US
• Kevin Cyrus Robinson · Emmaus, US
• Biswanath Roy · Bethlehem, US
• Ping-Heng Wu · Daguantang, CN

Key dates

• Filing date: Jan 18, 2000
• Grant date: Aug 20, 2002
• Expiry date: Jan 18, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

The invention is a semiconductor device and method of fabricating the device. The device includes a semiconductor substrate with an active region, and a low dielectric constant insulating layer formed over the substrate. An additional insulating layer is formed over the low dielectric constant layer by a low temperature deposition, such as ion beam assistance deposition. A metal layer can then be formed over the additional layer using lift-off techniques. The metal layer can be patterned to form a bond pad which may be displaced from the area over the active region. Wire bonds can be made on the bond pad using ultrasonic energy.