Low voltage reset circuit device that is not influenced by temperature and manufacturing process
US6437614B1 · kind B1 · utility
30Cited by
1References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 24, 2001 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | May 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/223
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A low voltage reset circuit device without being influenced by temperature and manufacturing process is formed by a first low voltage reset circuit using an energy gap circuit to generate a reference voltage, and a second low voltage reset circuit using a threshold voltage of a MOS transistor as a reference voltage. The first low voltage reset circuit is used to provide an accurate low voltage reset property,. while the circuit only works as VDD>1.2V. When VDD<1.2V, the second low voltage reset circuit still works normally for providing the desired reset signal thereby covering the low VDD voltage range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.