Single domain state laminated thin film structure
US6437949B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Oct 14, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A thin film structure suitable for use as a shield for a read element of a transducing head has a first ferromagnetic layer, a second ferromagnetic layer, a spacer layer and a bias layer. The spacer layer is positioned between the first ferromagnetic layer and the second ferromagnetic layer. The bias layer is positioned adjacent the first ferromagnetic layer. A product of a thickness of the first ferromagnetic layer and a magnetic moment of the first ferromagnetic layer is substantially equal to a product of a thickness of the second ferromagnetic layer and a magnetic moment of the second ferromagnetic layer. An easy axis of the first ferromagnetic layer is substantially parallel to an easy axis of the second ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.