Process for producing thin film gas sensors with dual ion beam sputtering
US6440276B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Jan 16, 2001 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Jan 16, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A process for making a stoichiometric and crystalline thin film CuO catalytic layer atop a gas sensing layer for the detection of dilute sulfur compound gases. The sensing layer is made using dual ion beam sputtering, where an argon ion beam sputters targets comprising Sn or its oxides, and a pure or highly concentrated oxygen ion beam is simultaneously deposited on a substrate. The catalytic layer is made using dual ion beam sputtering, where an argon ion beam sputters targets comprising CU or its oxides, and a pure or highly concentrated oxygen ion beam is simultaneously deposited on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.