Enhancement of carrier concentration in As-containing contact layers
US6440764B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2000 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Nov 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for cooling an MOVPE deposited, As-containing, P-type contact layer includes cooling the contact layer in an arsine environment to preserve the contact layer during the initial stages of the cooling process until a threshold temperature in the range of 560 to 580° C. is attained. During the cooling process, the arsine flow is reduced with respect to the arsine flow used during the MOVPE deposition. After the threshold temperature is attained, the arsine gas is withdrawn and the contact layer is cooled further. Because of the removal of the arsine gas at the threshold temperature, free carrier concentration within the contact layer is enhanced above the atomic concentration of the P-type dopant, and contact resistance is improved to a suitably low level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.