Method for fabricating an infrared-emitting light-emitting diode

US6440765B1 · kind B1 · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Reinhard Sedlmeier · Neutraubling, DE
• Ernst Nirschl · Wenzenbach, DE
• Norbert Stath · Regensburg, DE

Key dates

• Filing date: Feb 8, 1999
• Grant date: Aug 27, 2002
• Expiry date: Feb 8, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/81

Abstract

A method for fabricating an infrared-emitting light-emitting diode in which a layer sequence is applied onto a semiconductor substrate, preferably composed of GaAs. The layer sequence has, proceeding from the semiconductor substrate, a first AlGaAs cover layer, a GaAs and/or AlGaAs containing active layer and a second AlGaAs cover layer. In which case, the first AlGaAs cover layer and the active layer are fabricated by a metal organic vapor phase epitaxy (MOVPE) method and the second AlGaAs cover layer is fabricated by a liquid phase epitaxy (LPE) method. Furthermore, an electrically conductive coupling-out layer having a thickness of at least about 10 &mgr;m is deposited on the second AlGaAs cover layer by the LPE method. The coupling-out layer is optically transparent in the infrared spectral region.