Method of manufacturing semiconductor device with sidewall metal layers
US6440822B1 · kind B1 · utility
10Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2001 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Jul 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device, trench sections are formed on a side of one of opposing surface portions of a substrate. At lest a part of each of the trench sections is covered by a power supply metal layer which is formed on the one surface portion of the substrate. The substrate is fixed to a support such that the one surface of the substrate fits to the support. A chip is separated from the substrate using the trench sections. A conductive film is formed on side surface portions of the chip and the other surface portion of the chip. Then, the chip is separated from the support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.