Process of fabricating semiconductor device having low-resistive contact without high temperature heat treatment
US6440828B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 1997 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | May 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A miniature contact is incorporated in a semiconductor device for transferring an electric signal between a conductive wiring and an impurity region, and a titanium silicide and a single crystal silicon region doped with an impurity forms an ohmic contact; in order to form the ohmic contact, a surface portion of the single crystal silicon region is made amorphous by using an ion-bombardment, thereafter, titanium is deposited on the amorphous silicon to have the thickness ranging between 3 nanometers and 10 nanometers, and the titanium layer is converted to a titanium silicide layer through an annealing at 400 degrees to 500 degrees in centigrade, thereby forming the low-resistive ohmic contact without changing the impurity profile of the single crystal silicon region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.