Two-step CMP method and employed polishing compositions
US6440857B1 · kind B1 · utility
4Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2001 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Jan 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a two-step CMP method and employed polishing compositions. In the first step, a first polishing slurry is provided to selectively polish the Al-alloy layer. Next, a second polishing slurry is provided to selectively polish the barrier layer. Accordingly, undesired surface non-planarity after the CMP process, such as metal dishing and corrosion of dielectric layers with complicated pattern geometry, can be avoided, and thus the planarization of wafer surfaces can be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.