Low-K dielectric constant CVD precursors formed of cyclic siloxanes having in-ring SI—O—C, and uses thereof
US6440876B1 · kind B1 · utility
17Cited by
10References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 5, 2001 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Oct 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated circuits are disclosed. A Si—O—C-in-ring cyclic siloxane precursor compound is applied to the surface by chemical vapor deposition where it will react with the surface and form a film having a dielectric constant, k, less than 2.5. The compound generally has the formula (—O—R1—O—)SiR2R3 or the formula (—R1—O—)SiR2R3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.