Photosensitive polymer
US6441115B1 · kind B1 · utility
9Cited by
7References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2000 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Dec 1, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0397
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The present invention provides a photosensitive polymer containing the following structure unit of formula (II): Wherein R is hydrogen or C1-C4 alkyl group; R′ is C1-C4 alkyl group; n is an integer of 2, 3, 4, 5 or 6. This photosensitive polymer also relates to chemical amplified photoresist composition. This chemical amplified photoresist composition can be applied to general lithography processes, especially in 193 nm lithography and the patterns formed from the photoresist composition exhibit excellent resolution and photosensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.