Patent · US Expired

Gate controlled thyristor driven with low-inductance

US6441407B1 · kind B1 · utility

1Cited by

2References

14Claims

0Family size

Assignee

Asea Brown Boveri, S.A. · CH

Inventors

Horst Gruning · Wettingen, CH
Thomas P. Keller · Freising, DE
Sven Klaka · Habsburg, CH
Alexander Klett · Waldshut-Tiengen, DE
Philippe Maibach · Muhen, CH
Bjorn Odegard · Turgi, CH
Jochen Rees · Waldshut-Tiengen, DE

Key dates

Filing date	Dec 19, 2000
Grant date	Aug 27, 2002
Priority date	—
Expiry date	Dec 19, 2020

Classification

Technology area (CPC H)Electricity
CPC primaryH10D18/60
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A semiconductor component including a housing for a semiconductor substrate, an anode, a cathode, an annular gate electrode flange, which laterally protrudes from the housing and concentrically surrounds the housing, and an annular auxiliary cathode flange, which protrudes from the housing and makes contact with the cathode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.