Solid-state image sensor having a substrate with an impurity concentration gradient
US6441411B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2000 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Dec 4, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.