Ferroelectric and paraelectric thin film devices using dopants which eliminate ferroelectricity
US6441415B1 · kind B1 · utility
7Cited by
4References
5Claims
0Family size
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Key dates
| Filing date | Jun 25, 1999 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Jun 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A method for simultaneously producing areas of paraelectric states and areas of ferroelectric states on a single thin film layer, thereby reducing the number of processing steps required to produce integrated chips containing both standard capacitors and non-volatile memory devices from the number of steps needed using the conventional approach. A device containing both ferroelectric capacitors and non-ferroelectric capacitors using a single thin film as the dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.