Integrated device with bipolar transistor and electronic switch in “emitter switching” configuration
US6441445B1 · kind B1 · utility
6Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 1999 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Oct 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
The integrated circuit device has a vertical conduction structure in which a region, which contains the base of a bipolar transistor, has zones having different concentrations. The concentrations are lower where the flow of charges is more intense and higher elsewhere. A high gain of the bipolar transistor and a low resistance of the electronic switch in conduction are thus obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.