High-frequency resonant gate driver circuit for MOS-gated power switches
US6441673B1 · kind B1 · utility
30Cited by
10References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 6, 2000 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Nov 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/009
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A resonant gate driver circuit suitable for driving MOS-gated power switches in high-frequency applications recovers gate drive energy stored in the gate capacitance of the power switches, resulting in substantially lossless operation. The resonant gate driver circuit provides bi-polar gate control signals that are compatible with PWM operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.