Externally programmable antifuse
US6441676B1 · kind B1 · utility
6Cited by
11References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2001 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Mar 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming an antifuse circuit that includes a capacitor and a detector. The capacitor is formed using standard MOS processes in a well. The gate serves as one electrode and the well serves as another electrode of the capacitor. The antifuse is programmed by eternally provided radiation that can rupture the gate oxide so that the gate and the well can contact each other. The gate and well form a PN junction, transforming the capacitor into a diode. The diode provides the conductive path of the programmed antifuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.