CMOS voltage reference

US6441680B1 · kind B1 · utility

Assignee

• The Hong Kong University of Science and Technology

Inventors

• Ka Nang Leung · Kowloon, CN
• Kwok Tai Philip Mok · Hong Kong, CN
• Ka Chun Kwok · Fremont, US

Key dates

• Filing date: Mar 29, 2001
• Grant date: Aug 27, 2002
• Expiry date: Mar 29, 2021

Classification

• Technology area (CPC G): Physics
• CPC primary: G05F3/267
• WIPO field: Control
• WIPO sector: Instruments

Abstract

A CMOS reference voltage generating circuit is described that produces a reference voltage by taking the difference between the gate-source voltages of two p-type and n-type CMOS transistors operating in the saturation region, one of the gate-source voltages being multiplied by a gain factor. Different circuits are described for situations where the n- or p-type transistors have the greater temperature dependence.