Method and system for wafer-level tuning of bulk acoustic wave resonators and filters
US6441702B1 · kind B1 · utility
43Cited by
7References
27Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 27, 2001 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Apr 27, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the thickness of the device. In particular, the thickness of the device has a non-uniformity profile across the device surface. A mask having a thickness non-uniformity profile based partly on the thickness non-uniformity profile of the device surface is provided on the device surface for etching. A dry etching method is used to remove part of the mask to expose the underlying device surface and further removed the exposed device surface until the thickness non-uniformity of the device surface falls within tolerance of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.