Method for forming photoresist pattern and manufacturing method of magnetoresistive effect thin-film magnetic head
US6444406B1 · kind B1 · utility
8Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2001 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Jul 6, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49048
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for forming a photoresist pattern, includes a step of forming a photoresist pattern having a certain width, and a step of performing thereafter ion milling with respect to side walls of the formed photoresist pattern by using an ion beam with a large incident angle so as to reduce the width of the formed photoresist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.