Intermediate band semiconductor photovoltaic solar cell
US6444897B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 8, 2001 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Feb 8, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
The invention relates to a solar cell containing a semiconductor (1) with an intermediate band (2) that is half filled with electrons, located between two layers of ordinary n type (3) and p type (4) semiconductors. When lighted, electron-hole pairs are formed either by a photon that absorbs the necessary energy (5) or by two photons (6,7) that absorb less energy which pump an electron from the valence band to the intermediate band (8) and from the latter to the conductance band (9). An electrical current is generated that exits on the p side and returns via the n side. The n and p layers also prevent the intermediate band from contacting the outer metal connections, which would have resulted in a short-circuit. Said cell converts solar energy into electricity in a more efficient manner than conventional cells and contributes to improvement of the photovoltaic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.