Ramp-edge structured tunneling devices using ferromagnet electrodes
US6445024B1 · kind B1 · utility
7Cited by
4References
6Claims
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Key dates
| Filing date | Jan 25, 2000 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Jan 25, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The fabrication of ferromagnet-insulator-ferromagnet magnetic tunneling junction devices using a ramp-edge geometry based on, e.g., (La0.7Sr0.3) MnO3, ferromagnetic electrodes and a SrTiO3 insulator is disclosed. The maximum junction magnetoresistance (JMR) as large as 23% was observed below 300 Oe at low temperatures (T<100 K). These ramp-edge junctions exhibited JMR of 6% at 200 K with a field less than 100 Oe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.