Semiconductor device
US6445054B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2000 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Sep 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
Abstract
A semiconductor device comprises an active area with a voltage termination structure located adjacent to the active area at an edge portion of the device. The edge portion comprises a substrate region (12) of a first semiconductor type. The voltage termination structure comprises at least one first termination region (11) of a second semiconductor type, the or each first termination region having at least one of either second and third termination regions (11a, 11b) of third and fourth semiconductor types located at substantially opposing edges thereof. The second and third termination regions (11a, 11b) respectively have a higher semiconductor doping concentration than the edge portion substrate region (12) and a lower semiconductor doping concentration than the first termination region(s) (11).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.