Single source sputtering of thioaluminate phosphor films
US6447654B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | May 29, 2001 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | May 29, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/0623
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of deposition of a phosphor in a single-source sputtering process, in which the phosphor is selected from the group consisting of ternary, quaternary or higher thioaluminate, thiogallate and thioindate phosphors, and composites thereof, synthesized with cations selected from Groups IIA and IIB of the Periodic Table of Elements. The phosphor is of a pre-determined composition of elements. The method comprising sputtering in a hydrogen sulphide atmosphere from a single source composition so as to deposit a composition on a substrate. The composition of the targets of the single source has a relative increase in concentration of elements of the phosphor that have a lower atomic weight compared to other elements in said phosphor. The relative increase is controlled such that deposition of the predetermined composition is effected on the substrate. Preferred phosphors are barium thioaluminate (BaAl2S4:Eu), and barium magnesium thioaluminates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.