Electronic power device integrated on a semiconductor material and related manufacturing process

US6448125B1 · kind B1 · utility

Assignee

• STMicroelectronics SA

Inventors

• Davide Giuseppe Patti · Mascalucia, IT
• Francesco Priolo · San Gregorio di Catania, IT
• Vittorio PRIVITERA · Nettuno, IT
• Giorgia Franzo · San Gregorio di Catania, IT

Key dates

• Filing date: Jan 27, 1999
• Grant date: Sep 10, 2002
• Expiry date: Jan 27, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

An electronic power device is integrated on a substrate of semiconductor material having a first conductivity type, on which an epitaxial layer of the same type of conductivity is grown. The power device comprises a power stage PT and a control stage CT, this latter enclosed in an isolated region having a second type of conductivity type. The power stage PT comprises a first buried area having the second type of conductivity type and a second buried area, partially overlapping the first buried area and having the first conductivity type. The isolation region and the control stage CT comprise respectively a third buried area, having the second conductivity type, and a fourth buried area, partially overlapped to the third buried area and having the first conductivity type. Said first, second, third and fourth buried areas are formed in the epitaxial layers at a depth sufficient to allow the power stage PT and the control stage CT to be entirely formed in the epitaxial layers.