Production method of semiconductor base material and production method of solar cell
US6448155B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2000 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Jun 12, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68368
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When a semiconductor layer formed via a separation layer on a substrate is supported by a support member and a pulling force is then exerted on the support member to mechanically break the separation layer to thereby form a thin-film semiconductor, the substrate is held by vacuum and/or electrostatic attachment and separation of the thin-film epitaxial layer is initiated from an area other than an edge of the substrate. This provides a method capable of obtaining the thin-film epitaxial layer with excellent characteristics in a good yield and permitting repetitive uses of the substrate, without inducing lifting of the substrate due to the separation force overcoming the attaching force of the substrate when producing a semiconductor base material and a solar cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.