Method for forming a high dielectric constant material
US6448192B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 16, 2001 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Apr 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02189
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Highe quality silicon oxide having a plurality of monolayers is grown at a high temperature on a silicon substrate. A monolayer of silicon oxide is a single layer of silicon atoms and two oxygen atoms per silicon atom bonded thereto. The silicon oxide is etched one monolayer at a time until a desired thickness of the silicon layer is obtained. Each monolayer is removed by introducing a first gas to form a reaction layer on the silicon oxide. The gas is then purged. Then the reaction layer is activated by either another gas or heat. The reaction layer then acts to remove a single monolayer. This process is repeated until a desired amount of silicon oxide layer remains. Because this removal process is limited to removing one monolayer at a time, the removal of silicon oxide is well controlled. This allows for a precise amount of silicon oxide to remain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.