Thin-film transistor and liquid crystal display device
US6448578B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 1999 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Aug 6, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136295
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a thin-film transistor to be used in an active matrix liquid crystal display device, each of a gate signal line, a source signal line, and a drain extraction electrode has a three-layer structure. Specifically, each of these members is made up of a lower layer made of a titanium film, an intermediate layer made of an aluminum film, and an upper layer made of a titanium film containing nitrogen. Since the respective upper layers, in contact with a gate insulating film or an interlayer insulating film made of a silicon nitride film, are made of titanium films containing nitrogen, they have superior adhesion to the silicon nitride film. Consequently, film peeling, etc. during the manufacturing process can be suppressed. Further, providing the titanium film beneath the aluminum film contributes to reduction of the resistance of the aluminum film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.