Solid-state imaging device
US6448596B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2001 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Aug 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
The present invention relates to a solid-state imaging device. More specifically, the invention relates to the solid-state imaging device, which uses a MOS image sensor of a threshold voltage modulation system used for a video camera, an electronic camera, an image input camera, a scanner, a facsimile or the like. The solid-state imaging device is constructed in a manner that pixels are arrayed in a matrix form. Each pixel includes: a photo-diode for generating photo-generated charges by light irradiation; and an insulated gate field effect transistor for light signal detection, provided adjacently to the photo-diode, for storing the photo-generated charges beneath a channel region under a gate electrode, and modulating a threshold voltage by the stored photo-generated charges to detect a light signal. The gate electrodes are disposed at at least four directions around a periphery of the photo-diode, and the photo-diodes are disposed at at least four directions around a periphery of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.