Circuit-incorporating photosensitive device

US6448614B2 · kind B2 · utility

Assignee

• SHARP KABUSHIKI KAISHA · JP

Inventors

• Masaru Kubo · Kanmaki, JP
• Toshihiko Fukushima · Tsuchiura, JP
• Zenpei Tani · Tondabayashi, JP

Key dates

• Filing date: May 25, 2001
• Grant date: Sep 10, 2002
• Expiry date: May 25, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/103

Abstract

A circuit-incorporating photosensitive device comprising: an SOI wafer including a first silicon substrate, a second silicon substrate, and an oxide film; a photodiode formed in a first region of the SOI wafer; and a signal processing circuit formed in a second region of the SOI wafer, wherein the photodiode includes a photosensitive layer formed of an SiGe layer.