Mask layout for sidefed RF power amplifier
US6448858B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2000 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Sep 15, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F1/302
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A side fed RF amplifier comprising a plurality of transistors connected in parallel such that the base, emitter, and collector leads of each transistor are electrically connected to the base, emitter, and collector leads, respectively, of all other transistors. A common, physical point interconnects the power amplifier current source and the base leads of every transistor. The transistors are arranged such that the impedance between the common physical point and the base lead of any one transistor is substantially equivalent to the impedance between the common point and the base lead of any other transistor within the power amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.