Electro-optic modulator with enhanced bias stability
US6449080B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2000 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Mar 8, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/21
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A co-planar waveguide interferometric electro-optic modulator that reduces the bias point sensitivity of the modulator to ambient temperature and to applied RF is described. The modulator includes a first and second waveguide that are formed in an electro-optic substrate. A RF electrode is positioned on the electro-optic substrate between the first and the second waveguide. A ground electrode that may include a slot is positioned proximate to the second waveguide. A guard ground electrode is positioned proximate to the first waveguide to sink heat from the RF electrode and may also balance the thermal stress in the two waveguides. A dielectric material may also be positioned proximate to the first waveguide to balance the thermal stress in the two waveguides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.