Surface-emitting laser
US6449300B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2000 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Mar 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18369
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface-emitting laser in which a first distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, an active layer and a second distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, are formed on a semiconductor substrate, successively, including a current stenosed layer having an oxidized area in a remote junction surface therein between at least one of the first and the second distributed Bragg reflectors and the active layer, and plural capacitance-reducing layers, each layer having a smaller oxidized area than the oxidized area in a remote junction surface constituting the current stenosed layer, at least one of the first and the second distributed Bragg reflectors, the plural capacitance-reducing layers, the current stenosed layer and the active layer being arranged successively,one of the first and the second distributed Bragg reflectors constituting a first conductive type Bragg reflector,the other constituting a second conductive type Bragg reflector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.