Semiconductor force/torque sensor

US6450040B1 · kind B1 · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Bernd Dorsch · Unterleinleiter, DE
• Hans-Peter Hohe · Heiligenstadt, DE
• Dieter Seitzer · Erlangen, DE

Key dates

• Filing date: Aug 22, 2000
• Grant date: Sep 17, 2002
• Expiry date: Aug 22, 2020

Classification

• Technology area (CPC G): Physics
• CPC primary: G01L1/18
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A force/torque sensor has a semiconductor region which is adapted to be subjected to a force or torque. Two control electrodes are provided on a first and a second side of the semiconductor region, the sides being arranged in spaced, opposed relationship with one another, and a current through the semiconductor region being producible between the control electrodes. Two sensor electrodes are provided on a third and a fourth side of the semiconductor region, the sides being also arranged in spaced, opposed relationship with one another and extending essentially at right angles to said first and second sides. A force or torque applied to the semiconductor region is determinable by detecting a voltage present between the sensor electrodes when a current flows between the control electrodes. The semiconductor region is formed by the channel of a field effect transistor, the drain an source electrodes of said field effect transistor defining the control electrodes.