Ferroelectric composition, ferroelectric vapor deposition target and method of making a ferroelectric vapor deposition target
US6451222B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1999 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Dec 16, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/891
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention comprises ferroelectric vapor deposition targets and to methods of making ferroelectric vapor deposition targets. In one implementation, a ferroelectric physical vapor deposition target has a predominate grain size of less than or equal to 1.0 micron, and has a density of at least 95% of maximum theoretical density. In one implementation, a method of making a ferroelectric physical vapor deposition target includes positioning a prereacted ferroelectric powder within a hot press cavity. The prereacted ferroelectric powder predominately includes individual prereacted ferroelectric particles having a maximum straight linear dimension of less than or equal to about 100 nanometers. The prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape having a density of at least about 95% of maximum theoretical density and a predominate maximum grain size which is less than or equal to 1.0 micron. In one implementation, the prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape at a maximum pressing temperature which is at least 200° C. lower than …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.