Thin film crystal growth by laser annealing
US6451631B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 10, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Oct 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02683
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature. However, the central part of the liquid pool subjected to continued heating by the first laser beam cools down slowly. Grains nucleated in the periphery of the fully molten spot can therefore grow into the liquid-Si and extend in length until they collide at the center…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.