Method for forming a bipolar transistor stabilized with electrical insulating elements
US6451659B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1999 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Dec 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor component of the heterojunction bipolar transistor type comprises, on a substrate, a collector, a base and a mesa-shaped emitter resting on the base. The bipolar transistor furthermore comprises electrically insulating elements in contact with the base and the flanks of the emitter mesa, said elements having a width of the same magnitude as the width of the mesa and providing the component with greater stability. Furthermore, a method for the manufacture of a component of this kind comprises in particular a step for the ion implantation of insulating ions through the constituent layer of the emitter mesa so as to define the electrically insulating elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.