Method of manufacturing a cylindrical storage node in a semiconductor device
US6451663B1 · kind B1 · utility
6Cited by
8References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2001 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Oct 24, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/949
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a cylindrical storage node in a semiconductor device, in which loss differences of the cylindrical storage node between the center and the edge of cell areas, caused by an etch-back process of storage node isolation, is minimized, thereby maintaining uniform electrical capacitances over the entire area of a semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.