Optoelectronic sensor
US6452153B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Nov 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/778
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The optoelectronic sensor comprises at least two pixels (1.11, 1.12, 1.21, 1.22), each pixel (1.11, 1.12, 1.21, 1.22) comprising a photodiode (2), and means for electrically connecting at least two pixels, the connecting means comprising FETs (6) for switching the connection on or off. The pixels (1.11, 1.12, 1.21, 1.22) are designed in such a way that if, e.g., four pixels (1.11, 1.12, 1.21, 1.22) are connected the photocharges generated in the connected pixels (1.11, 1.12, 1.21, 1.22) are combined in one of the connected pixels (1.22), whereby the spatial resolution of the sensor is reduced. A skimming FET (3) arranged between the photodiode (2) and a charge detection circuit (4) offers a floating source and floating drain in each pixel (1.11, 1.12, 1.21, 1.22). Thus the sensor can be manufactured in CMOS technology and is suited for photocharge binning. The invention makes it possible to vary the spatial resolution, the light sensitivity and/or the readout velocity by purely electronic means. This has the advantage of an increased light sensitivity, and, moreover, of being offset free. The power consumption of the sensor is reduced at a constant frame frequency if the spatial re…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.