Thin film transistor for use in liquid crystal display device and method for manufacturing the same
US6452241B1 · kind B1 · utility
20Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Oct 11, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136286
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pair of lightly doped drain (LDD) regions are provided in a thin film transistor of each pixel of a thin film transistor substrate for a liquid crystal display device and a light shielding portion of a material having reflectivity lower than that of a metal and covering a portion or a whole portion of the LDD regions is provided so as to restrict an internal random reflection of light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.