Film-like composite structure and method of manufacture thereof
US6452244B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 10, 1999 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Aug 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
On a semiconductor layer 1 consisting of a substrate of a semiconductor single crystal or the like, a metallic layer 2 of a thickness of 20 nm or less is formed. The metallic layer 2 comprises a first area A directly contacting with the semiconductor layer 1, and a second area B that is interposed by an intermediate layer 3 consisting of an insulator, a metal different from the metallic layer 2 or a semiconductor different from the semiconductor layer 1 between the semiconductor 1 and the metallic layer 2, and of a thickness of 10 nm or less. The first area and the second area are different in their Schottky currents, further in their Schottky barrier heights. Any one of the respective areas A and B has an area of nanometer level, and the respective interfaces in each of the areas A and B have an essentially uniform potential barrier, respectively. Such a film-like composite structure contributes to a minute semiconductor device of nanometer level and realization of a new functional device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.