Magnetoresistive effect sensor with double-layered film protection layer
US6452385B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Feb 4, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/90
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a MR sensor includes forming a MR multi-layered structure of a first anti-ferromagnetic material layer, a first ferromagnetic material layer (pinned layer) which receives bias magnetic field caused by exchange coupling with the first anti-ferromagnetic material layer, a nonmagnetic material layer and a second ferromagnetic material layer (free layer) which changes its magnetization direction in response to magnetic signal applied thereto, depositing a protection layer on the MR multi-layered structure, removing full depth of at least end regions of the protection layer and a partial depth of end regions of the second ferromagnetic material layer, and forming a second anti-ferromagnetic material layer for exchange coupling to control magnetic domain in the second ferromagnetic material layer, on at least the end regions of the second ferromagnetic material layer. The removing is executed before annealing for controlling magnetization direction of the first anti-ferromagnetic material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.