Voltage generator for compensating for temperature dependency of memory cell current
US6452437B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Jul 21, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3436
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A voltage generator includes first to fourth current sources, first to fourth MOS transistors and a resistor. The first and second current sources created constant currents which are independent of a temperature change, and the third and fourth current sources create currents which vary in proportion to a temperature change. The resistor acts as a current/voltage converter for converting a current into a voltage. The first current source and the current path of the first MOS transistor are serially connected between a power supply and an output terminal. The second current source and the current path of the second MOS transistor are serially connected between the output terminal and a ground node. The third current source and the current path of the third MOS transistor are serially connected between the power supply and the output terminal. The fourth current source and the current path of the fourth MOS transistor are serially connected between the output terminal and the ground node. The gates of the first to fourth MOS transistors are supplied with first to fourth enable signals. The first to fourth MOS transistors are controlled so as to be selectively set into ON/OFF states b…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.