Magnetic tunnel device, method of manufacture thereof, and magnetic head
US6452892B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | May 1, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
First and second magnetic layers are laminated though a tunnel barrier layer, wherein a region is formed in which change in a magnetic resistance ratio with respect to change in a voltage applied in such a manner that the second magnetic layer has a lower potential as compared with the potential of the first magnetic layer is smaller than change in a magnetic resistance ratio with respect to change in a voltage applied in such a manner that the second magnetic layer has a higher potential as compared with the potential of the first magnetic layer. Voltage is applied to the magnetic tunnel device in such a manner that the potential of the second magnetic layer is lower than that of the first magnetic layer so that dependency of the magnetic resistance ratio on the voltage is reduced. Thus, a stable tunnel current flows.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.