Semiconductor device and method for fabricating the same
US6455364B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2000 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Mar 15, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.