Method for preventing a by-product ion moving from a spacer
US6455389B1 · kind B1 · utility
Inventors
Key dates
| Filing date | Jun 1, 2001 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Jun 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/671
Abstract
This invention relates to a method that prevents by-productions from moving from a spacer. In particular by using an offset liner, a liner with a treated surface and a spacer that is formed by using the atomic layer deposition method or the rapid thermal chemical vapor deposition method. The present invention uses a liner, whose surface is treated, and a spacer, which is formed by using the atomic layer deposition method or the rapid thermal chemical vapor deposition method. This prevents by-product ions from moving from the spacer to other regions by using actions in diffusion and drift to affect the voltage stability of the semiconductor device after the current is connected. This defect will further affect qualities of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.