Method of forming a compound film of a semiconductor and a metal by self-alignment
US6455420B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 19, 1998 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Aug 19, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A relatively high-resistance first compound film of a semiconductor and a metal is formed on a surface of a semiconductor region in self alignment by a relatively low-temperature first annealing. The relatively high-resistance first compound film is converted into a relatively low-resistance second compound film by a relatively high-temperature second annealing which is done after an insulating film is formed above the first compound film. Hence, the annealing aiming at decreasing a resistance of the compound film can serve as another annealing as well. The number of times of annealing applied to the compound film the resistance of which has been decreased is small, and a thinning effect of the compound film can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.