Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density
US6455443B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2001 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Feb 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02216
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si—O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si—O bonds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.