Semiconducting shield compositions
US6455771B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2001 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Apr 18, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08L2312/00
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A conducting polymer composite including:(i) a phase I material consisting essentially of a polar copolymer of ethylene and an unsaturated ester having 4 to 20 carbon atoms, said copolymer having a crystallinity of 0 to about 30 percent as determined by differential scanning calorimetry analysis and having a melt viscosity &eegr;I;(ii) a phase II material having a crystallinity of 0 to about 30 percent as determined by differential scanning calorimetry analysis and having a melt viscosity &eegr;II, said phase II material consisting essentially of (A) a non-polar copolymer of ethylene, an alpha-olefin having 3 to 12 carbon atoms, and, optionally, a diene, or (B) a non-polar elastomer, either of which, when mixed with the phase I material, will not enter into a completely homogeneous state, but is compatible with the phase I material; and(iii) a conducting filler material dispersed in the phase I material and/or the phase II in an amount sufficient to be equal to or greater than the amount required to generate a continuous conducting network in the phase I and phase II materials,with the proviso that the phase I and phase II materials, in the molten state, have the following relation…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.